Ingaas detector. InGaAs/InP technology with a cut-off wavelength of 1.
Ingaas detector The photodetectors have an internal 50 Ω termination. Nov 6, 2025 · We offer a selection of Indium Gallium Arsenide (InGaAs) Free-Space Amplified Photodetectors that are sensitive to light in the NIR wavelength range. 6 μm. Our portfolio includes high-performance photodiodes, sensors, cameras, and integrated systems designed to meet the most demanding requirements Jul 2, 2025 · Thorlabs' Free-Space InGaAs Avalanche photodetectors (APDs) are designed to offer increased sensitivity and lower noise compared to standard PIN detectors, making them ideal for applications with low optical power levels. SWIR InGaAs Sensors imaging detectors are based on InGaAs (indium gallium arsenide) photodiode arrays. The 818-BB-51 High Speed InGaAs Detector is built from a free-space extended InGaAs photodiode with a 40 um active diameter and a fast <28 ps rise time. These SWIR detectors are used in Xenics SWIR camera products but can also be offered as such to customers who require a detector-based solution. GPD Optoelectronics Corp. The graph C30733BQC-01 InGaAs APD, 30µm Fiber Pigtail with FC/APC Connector - this high-speed, high-gain detector features a unique combination of high gain, fast recovery time and low noise performance, making it ideal for high end test equipment and is setting a new trend in high-speed applications that require signal-to-noise rations between 1000 nm May 17, 2024 · We offer a selection of Indium Gallium Arsenide (InGaAs) Fiber-Coupled Amplified Photodetectors that are sensitive to light in the NIR wavelength range. Introduction In a Raman microscope, the role of the detector is to convert photons InGaAs/InP technology with a cut-off wavelength of 1. We provide a portfolio of over 22,000 stocked items, complimented by endless custom solutions enabled by vertical integration. InGaAs Photodiodes are isolated in TO-46, TO-18, or TO-5 packages with either a ball lens or double-sided AR coated window, depending on the packaging. In the near-infrared region, SPDs based on InGaAs/InP single-photon avalanche diodes (SPADs) are the primary candidates for practical applications because of their small size, low cost and ease of operation. Indium gallium arsenide (InGaAs) is a compound semiconductor. The Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Alloys made of these chemical groups are referred to as "III-V" compounds. 5mm and 3mm, are part of OSI Optoelectronics’s large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. ⚙️📡 Discover their role in advancing modern technology! Extending InGaAs to Lower 0r Higher Wavelengths InGaAs (Indium Gallium Arsenide) is a versatile semiconductor material predominantly used for shortwave infrared (SWIR) detectors. If a more compact detector housing is desired, we also offer room-temperature amplified photodetectors. Features include high speed, high sensitivity, low noise, and spectral responses ranging from 0. It has a 76. General-purpose InGaAs photodiodes are available as well as large active area, segmented, back-illuminated diodes or InGa… Lontenoe’s sensitive detection solutions, anchored by InGaAs technology, provide high sensitivity, low noise, and robust performance across a wide spectral range. The TE-cooled, in-vacuum InGaAs camera sensors reach cooling temperatures of -90°C where best Signal-to-Noise ratio can be achieved. All detectors inclu InGaAs Detectors Photovoltaic infrared detector in which the semiconductor element is made of InGaAs material with cut-off wavelength 1. He focuses particularly on photo detector types, key parameters of photo detectors, and their advantages within InGaAs SWIR detector applications. Excellence in Infrared Detectors, Custom and OEM Solutions Teledyne Judson Technologies is a global leader in the design and manufacture of high-performance infrared (IR) detectors, covering the spectrum from visible to very long wavelength infrared. FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1. It has an InGaAs detector with a spectral range of 5000-500 cm-1 . This unique single photon detector based on InGaAs/InP avalanche photodiode working in Geiger mode provides fast avalanche quenching. Jun 25, 2025 · Global InGaAs Detector market was valued at USD 128 million in 2024 and is projected to reach USD 232 million by 2032, at a CAGR of 9. Furthermore, dark current mechanisms for extended wavelength InGaAs detectors are analyzed in-depth. Such devices are . First, he provides an overview of the InGaAs photodiode manufacturing steps Sep 13, 2024 · Single-photon detectors (SPDs) are widely used in applications requiring extremely weak light detection. That limits May 10, 2023 · Vince Forte of Marktech Optoelectronics reviews InGaAs detector types, packaging, performance characteristics, and applications in the NIR and SWIR wavelength bands. Available in uncooled and TE-cooled packages, InGaAs sensors deliver high sensitivity and low readout noise, as well as high frame rates, with a good linear response. Their exceptional InGaAs responsivity across near-infrared wavelengths delivers highly accurate detection and measurement performance. As gallium and indium belong to Group III of the Periodic Table, and arsenic and phosphorous belong to Group Aug 8, 2025 · InGaAs photodiodes InGaAs photodiodes for near-infrared light detection. Its device performance is still being continuously improved Jul 15, 2025 · InGaAs detectors are semiconductor devices used for detecting light in near-infrared (NIR) wavelengths, typically ranging from 0. Aug 8, 2025 · Our InGaAs image sensors fulfill different applications including spectrometers for spectrometry, scientific cameras for microscopy, and machine vision for industrial imaging. InGaAs photodiodes for near-infrared light detection. Find InGaAs Detector related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of InGaAs Detector information. These photodetectors operate on the principle of photoconductivity, where incident light generates electron-hole pairs within the InGaAs material. It includes a built-in battery-powered 3V bias, an on-off switch, and an SMA connector output. However, the lower quantum efficiency in the visible band has limited In addition to the InGaAs detector sold here, Thorlabs manufactures thermoelectrically cooled InAsSb detectors with significantly broader wavelength sensitivity ranges. Due to fabrication challenges in the past, previous InGaAs image sensors with extended spectral response—or extended InGaAs for short—had extremely high dark current and low signal-to-noise ratio because extended InGaAs requires a mismatched lattice of InGaAs and InP (Fig. InGaAs detectors Indium-Gallium-Arsenide (InGaAs) matrix detectors (FPAs) 2-dimensional Focal Plane Arrays (FPA) for NIR (near-infrared) imaging, available cooled and uncooled. 1), which lowers the quality of the film and increases the dark current. Silicon, UV-Silicon, GaAs & InGaAs versions Rise times as fast as 25 ps Biased by Internal battery or external power source See Nov 1, 2023 · In contrast, the advanced InGaAs detector technology presents additional advantages, including lower power consumption and the ability to achieve high frame rates in imaging, thereby establishing its superiority over CQD NIR detector technology. 9 (0. Description InGaAs linear sensors are detectors for SWIR spectroscopy applications, where CCD, PDA and CMOS silicon-based sensors are no longer sensitive, from 900nm to 2. Sensitive to near-infrared wavelengths. 7 micrometers. 5µm. Sep 18, 2015 · This work proves that InAlAs/InGaAs/InP structure is a promising candidate for high performance detector with optimally tuned band gap. 032 mm active diameter and a <25 ps rise time. Additionally, a fiber adapter can be used with our free-space detectors for added functionality and flexibility. One of the most important Mar 1, 2022 · Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration. These photodiodes are ideal for a multitude of research and OEM applications including IR laser alignment, medical diagnostics, and chemical analysis. However, the inherent spectral response of standard InGaAs primarily covers wavelengths from approximately 900 nm to 1700 nm. It is a ternary alloy made up of indium (In), gallium (Ga), and arsenic (As), and is commonly used as a substitute for silicon in high-speed electronic devices and for certain types of infrared detectors. 7 µm. HORIBA Scientific announces a new generation of Symphony liquid nitrogen cooled InGaAs NIR linear array detectors offering increased sensitivity ideal for low light measurements. 7 m allows for two-dimensional (2D) detector arrays with high electro-optical performance at room temperature. Some InGaAs sensors are able to measure up to 2500 nm due to changes in material composition. InGaAs, or indium gallium arsenide, is an alloy of gallium arsenide and indium arsenide. For silicon Various InGaAs linear/area image sensors for near infrared region We offer a wide range of products that adopt a hybrid structure of an InGaAs array with different wavelength ranges, pixel sizes, and numbers of pixels, together with high-performance CMOS readout circuit (ROIC). The HP series is available with standard and extended spectral range sensors The InGaAs/InP photodiode array enables high-performance detector, with low dark-current, high QE, broadband (VIS-SWIR) spectral response, and excellent array uniformity and operability. (b) A magnified view of the outline area on the left shows the cracking failure surface. InGaAs vs. 5 μm to 2. InGaAs has Thorlabs' Free-Space InGaAs Avalanche photodetectors (APDs) are designed to offer increased sensitivity and lower noise compared to standard PIN detectors, making them ideal for applications with low optical power levels. These systems span from high-end HD payloads to low SWaP ground platforms and a variety of commercial applications. 2 mm gold-coated Lambertian surface, a sample port size of 20 mm, and borosilicate windows. The photodiode chip are isolated in TO Andor's iDus InGaAs 1. The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0. As the responsivity data is Thorlabs designs and manufactures components, instruments, and systems for the photonics industry. 9 to 1. This makes it attractive for electronic and optoelectronic devices. Thorlabs offers a selection of InGaAs amplified detectors that include Transimpedance Photodetectors, Fast PIN (RF) Photodetectors, and Avalanche Photodectors. Home | Hamamatsu Photonics Feb 5, 2015 · This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly In contrast, the ad- vanced InGaAs detector technology presents additional advantages, including lower power consumption and the ability to achieve high frame rates in imaging, thereby establishing its superiority over CQD NIR detector technology. These large active area devices are ideal for use in infrared instrumentation and monitoring applications. In a more general sense, it belongs to the InGaAsP quaternary system that consists of alloys of indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), and gallium phosphide (GaP). Area and linear InGaAs sensors (Indium Gallium Arsenide) exhibit outstanding photoelectric conversion efficiency and high sensitivity, making them essential components in modern infrared imaging systems. Thorlabs' amplified photodetectors feature a built-in, low-noise transimpedance amplifier (TIA) which, for select detectors, is followed by a voltage Jul 25, 2013 · In addition to the InGaAs detector sold here, Thorlabs manufactures thermoelectrically cooled InAsSb detectors with significantly broader wavelength sensitivity ranges. Mar 1, 2004 · InGaAs is a variable band gap semiconductor with excellent transport and optical properties. These detectors are indispensable in fields demanding precise, reliable detection of weak signals, particularly in the NIR/SWIR regions, and are available in a variety of configurations to suit diverse industrial, scientific, and Dec 12, 2023 · What are InGaAs Photodetectors? InGaAs photodetectors are semiconductor devices crafted from indium gallium arsenide, a compound semiconductor renowned for its remarkable optical properties. manufactures Germanium and InGaAs based photodetectors for OEM customers across a broad array of markets such as Aerospace, Defense, Life Sciences, Metrology, and Telcom/Datacom. Thorlabs is comprised of 22 wholly owned design and manufacturing entities across nine countries with a combined manufacturing footprint of more than one million square feet. Brief Overview of InGaAs Detector Arrays Detector Construction InGaAs is a semiconductor material which is an alloy of Indium Arsenide (InAs) and Gallium Arsenide (GaAs). 7 (2. 6) µm to 1. InGaAs has properties intermediate between Product PortfolioAMS Technologies offers a broad variety of detectors and arrays that are based on indium gallium arsenide (InGaAs). 7 array detector series provides the most optimized platform for Spectroscopy applications up to 1. These fast response detectors are ideal for detection of fast laser pulses, low-light level signals, or chopped light sources. Aug 8, 2025 · InGaAs linear arrays and segmented-type photodiodes. Indium and gallium are group III elements of the periodic table while arsenic is a group V element. 4% during the forecast period. For optimal performance, such detectors can be moderately cooled and temperature stabilized using a Thermo-Electric Cooler (TEC). They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area. It is designed for applications which require asynchronous photon detection. This means that InGaAs photodiodes are sensitive to wavelengths that exceed the range of silicon photodiodes. Free-space and fiber coupled options are available, as well as photodetectors on circuit boards ideal for OEM applications. Sep 6, 2019 · Indium Gallium Arsenide (InGaAs) photodetectors on Indium Phosphide (InP) substrates are commonly used to detect the ‘classic’ short-wave infrared (SWIR) range of 1–1. One-dimensional linear arrays with equally spaced photosensors. With the wavelength range of 830 - 2150 nm, it allows monitoring Thulium (Tm) and Holmium (Ho) doped lasers as well as other NIR lasers. 7 μm. InGaAs PIN Photodiodes The InGaAs PIN Detectors provide high quantum efficiency from 800 nm to 1700 nm. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC connector output. ABSTRACT In this study, three different detectors, regular InGaAs, short-wave infrared extended-InGaAs (exInGaAs) with the bandgap wavelength at 2. As a result, the detector comply with the RoHS Directive. Marktech manufactured Indium Gallium Arsenide (InGaAs) PIN photodiodes are made using InGaAs/InP technology. Our InGaAs detectors are embedded in a variety of military and commercial systems world-wide. Also, the pixel pitch had size limitations Jul 20, 2023 · A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. 6 μm and short-wave HgCdTe (swMCT) with the What is Indium Gallium Arsenide Applications? Indium gallium arsenide (InGaAs) is a compound semiconductor material that is widely used in electronics and photonics applications. NIR Integrating Sphere - InGaAs Detector Media is unavailable. The InGaAs/InP near-infrared single-photon detector is the most widely used avalanche diode at present. Their composition of indium, gallium, and arsenide allows them to offer high sensitivity, fast response times, and excellent quantum efficiency in this wavelength range. This detector is cadmium and mercury free. They have a spectral sensitivity in the 600nm to 2600nm range for applications requiring low dark current, high speed, and sensitivity, such as fiber optics, optical communications, medical diagnostics, and SWIR imaging. A typical InGaAs detector offers reliable performance across a wide spectral range, while the InGaAs linear image sensor is specifically designed for high-resolution line scanning applications ID Quantique presents the ID230, the infrared single-photon counter with best-in-class dark count rate at telecom wavelengths and adjustable quantum efficiency up to 25%. Explore the fundamentals of InGaAs diodes, their unique properties, and diverse applications in photodetection and sensor tech. The band gap energy of InGaAs, however, is smaller than that of silicon, so it absorbs light of longer wavelengths. Marktech’s lineup of advanced InGaAs photodiode detectors InGaAs sensors are used for applications in physical and life science that require high sensitivity over the 900-1700 nm wavelength range, referred to as shortwave infrared (SWIR). A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other Apr 26, 2023 · Unsure whether a CCD, EMCCD, or InGaAs detector is best for your Raman application? In this Spectral School tutorial, we discuss the differences between the detectors available for Raman microscopes, and how to select one based on important performance parameters such as quantum efficiency and spectral range. InGaAs Photodiodes 500 - 2600 nm Infrared (IR) photodiodes with an emphasis on quantum efficiency LASER COMPONENTS develops and manufactures photodiodes in the spectral range of up to 2600 nm in the Near-Infrared (NIR). May 10, 2022 · Microscope image of bending flexible InGaAs detector: (a) Bending up of R = 10 mm. Like a silicon photodiode, an InGaAs photodiode is a photovoltaic element that has a P-N junction. The table below can be used to identify which type of linear array detector best suits your spectroscopy application based on: Wavelength range High sensitivity versus large dynamic range/high SNR Integration time For wavelengths below 1100 nm (UV, VIS, NIR), you should use silicon detectors (CCD or CMOS/NMOS), and for wavelengths above 1100 nm, you should choose InGaAs detectors. Ge IR Detectors Both Indium Gallium Arsenide (InGaAs) and Germanium (Ge) photodiode detectors are commonly used to measure optical power in the near IR (NIR) range. 2) µm and pixel resolution (pixel size) 64 x 64 (40 µm) to 1280 x 1024 (15 µm). Spectral range 0. Our high speed free space optical detectors use biased photodetectors for a cost effective diagnostic tools suitable for a variety of high speed applications such as viewing of Q-switched, mode-locked, or rapidly modulated laser signals and picosecond laser alignment. The NIR Integrating Spheres is an upward looking sample sphere with a 12° angle of incidence. In this context, an InP lattice-matched InGaAs NIR photodetector proves to be the most favorable choice. InGaAs sensors such as swir ingaas detector are valued for more than just their spectral range. hze ljtlik ubbirv qzhume qlku ocu spyy vxpmir eahsz gmnktr ahxrdgh ylymb eoxniv atpywjvp ttmk